Dual ion beam deposition of amorphous semiconductor films

Details Dual ion beam deposition of amorphous semiconductor films Dual ion beam deposition of amorphous semiconductor films

C - Chemistry, Metallurgy

23

C

204/96.03

C23C 14/14 (2006.01) C23C 14/48 (2006.01) H01L 21/203 (2006.01) H01L 31/04 (2006.01)

Patent

CA 1235384

ABSTRACT A sputtering process for preparing amorphous semiconducting films having a reduced number of localized states is disclosed. In particular, hydrogenated films free of polyhydrides may be prepared according to the inventive process. In one application of the process, a silicon target is bombarded by separate beams of relatively heavy sputtering ions, such as argon ions, effective in sputtering the target and by passivating ions of a substance effective in passivating localized states in amorphous semiconducting films, such as hydrogen ions. The products of this sputtering are collected on remotely located substrates to form passivated amorphous films. Films produced according to the process may be doped and junction structures formed during deposition by adding ions of a gaseous dopant to the beam of passivating ions. In a preferred application, amorphous, hydrogenated silicon films contain hydrogen only in the form of silicon monohydride.

480168

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