Dual layer encapsulation coating for iii - v semiconductor...

Details Dual layer encapsulation coating for iii - v semiconductor... Dual layer encapsulation coating for iii - v semiconductor...

H - Electricity

01

L

356/164

H01L 21/314 (2006.01) H01L 21/285 (2006.01) H01L 21/311 (2006.01) H01L 21/318 (2006.01) H01L 21/60 (2006.01)

Patent

CA 1277438

7261 Title: DUAL LAYER ENCAPSULATION COATING FOR III - V SEMICONDUCTOR COMPOUNDS ABSTRACT OF THE DISCLOSURE A method for providing a dual layer diffusion mask or encapsulation coating for use with III - V compound semiconductors, the dual layer coating comprising an inner layer of silicon which closely matches the coefficient of thermal expansion of the III - V compound semiconductor and an outer layer of silicon nitride which is relatively impermeable to subsequent metallization and for thereafter applying metallized contacts to the III - V compound semiconductor through selectively etched openings nn the diffusion mask or encapsulation coating.

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