Dual mode high voltage power supply for providing increased...

G - Physics – 11 – C

Patent

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Details

G11C 16/04 (2006.01) G11C 16/30 (2006.01)

Patent

CA 2465843

A dual mode high voltage power supply circuit using an external high voltage (Vpp) connected through an internal high voltage switch (30) which determines whether the memory blocks of a non-volatile memory circuit (46) are programmed in a first mode from an internal high voltage charge pump (20) or are programmed in a second mode from an external high voltage power supply connected in parallel to the internal high voltage charge pump. When the dual mode high voltage power supply circuit is operating in the first mode using only its internal change pump (20) high voltage (Vm) , it operates in a low power, low-speed mode, programming only one or two bits at a time but allowing the charge pump area on the die to be small. When operating in the second mode, in which the external power supply high voltage is available, eight or more bits can be written to at the same time, thus allowing a fast programming mode without the need for increasing the size of the internal charge pump, thus eliminating the additional space and cost required to increase the die area.

L'invention concerne un circuit d'alimentation haute tension bi-mode qui fait appel à une haute tension (V¿pp?) externe raccordée par l'intermédiaire d'un commutateur (30) haute tension interne, lequel détermine si les blocs mémoire d'un circuit (46) de mémoire rémanente sont programmés selon un premier mode, au moyen d'une pompe (20) à charge haute tension interne, ou sont progammés selon un second mode, au moyen d'une alimentation haute tension externe montée en parallèle avec la pompe à charge haute tension interne. Lorsque le circuit haute tension bi-mode fonctionne selon le premier mode, en utilisant uniquement la haute tension (Vm) de sa pompe (20) de charge interne, il fonctionne selon un mode basse tension, à faible vitesse, et ne programme qu'un ou deux bits à la fois, mais permet l'utilisation d'une pompe à charge n'occupant qu'une surface de puce réduite. Le second mode, dans lequel la haute tension d'alimentation externe est disponible, permet l'écriture simultanée d'au moins huit bits et permet ainsi un mode de programmation rapide sans qu'il soit nécessaire d'augmenter la dimension de la pompe à charge interne, permettant ainsi d'éliminer l'espace supplémentaire et le coût nécessaires à l'augmentation de la surface de puce.

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