Dual plasma microwave apparatus and method for treating a...

C - Chemistry – Metallurgy – 23 – C

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204/181, 204/96.

C23C 14/00 (2006.01) B05D 3/06 (2006.01) H01J 27/18 (2006.01) H01J 37/32 (2006.01)

Patent

CA 1311214

ABSTRACT OF THE DISCLOSURE A plasma apparatus which generates a radio frequency (UHF or microwave) disk plasma and a hybrid plasma derived from the disk plasma. The microwave plasma acts as a source of excited ion and free radical species and electrons for the second plasma which is hybrid in that it contains species from both microwave and dc (or rf depending on bias) excitation. A plasma source defines a discharge chamber with a perforated grid adjacent an opening which allows ions, free radicals and electrons to be removed from the plasma. Ion attracting means are mounted in spaced relationship to the perforated grid outside the chamber for attachment to the surface to be treated for purposes of igniting a hybrid plasma and for attracting ions from the plasma to the surface by a suitable bias voltage potential. A platform supports the surface to be treated electrically insulated from the ion attracting means, wherein the ion attracting means and the platform are spaced from the plasma in the chamber such that the hybrid plasma is formed adjacent to the ion attracting means. The hybrid plasma can be used to treat an article with different species than are present in the disk plasma and provides more control in this regard than a single plasma. rn/

539246

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