H - Electricity – 04 – B
Patent
H - Electricity
04
B
345/50
H04B 10/155 (2006.01) H01L 33/00 (2006.01)
Patent
CA 1161148
DUAL-WAVELENGTH LIGHT-EMITTING DIODE Abstract of the Disclosure A dual-wavelength light-emitting diode is disclosed wherein at least two quaternary layers are epitaxially grown on indium phosphide substrate and a top indium phosphide layer of the opposite conductivity type is grown to establish a junction in the topmost quaternary layer. An isolation channel cuts through the epitaxial layers and divides the device into two separate regions. A dopant is diffused into one of the regions in order to establish a pn junction in the bottom quaternary layer. Independent electrical contacts bonded to the top indium phosphide layer in each of the regions establish an electrical connection to pn junctions in each of the two separate regions. The device can be effectively heat sinked by mounting the epitaxial layer side of the substrate to a beryllium oxide heat sink onto which gold bonding pads have been plated.
385521
Kirby Eades Gale Baker
Western Electric Company Incorporated
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