G - Physics – 11 – C
Patent
G - Physics
11
C
352/82
G11C 11/24 (2006.01) G11C 11/404 (2006.01) H01L 27/108 (2006.01)
Patent
CA 1199725
DYNAMIC MEMORY DEVICE ABSTRACT The dynamic memory device of the present invention is formed on an integrated semiconductor substrate subjected to alpha radiation and comprises a switching transistor having a switching terminal, an input-output terminal and a memory terminal; a bit line coupled to said input-output terminal for supplying a charge to said transistor; a word line coupled to said switching terminal for controlling the switch- ing of said transistor; and, an R-C circuit coupled to the memory ter- minal and comprising a charge storage capacitor for storing the charge supplied from said bit line and for substantially preventing loss of the stored charge due to particle radiation.
426852
Fujii Syuso
Iizuka Tetsuya
Uchida Yukimasa
Sim & Mcburney
Tokyo Shibaura Denki Kabushiki Kaisha
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