Dynamic memory with increased data retention time

Details Dynamic memory with increased data retention time Dynamic memory with increased data retention time

G - Physics

11

C

352/82

G11C 11/40 (2006.01) G11C 11/406 (2006.01) G11C 11/4094 (2006.01)

Patent

CA 1252564

DYNAMIC MEMORY WITH INCREASED DATA RETENTION TIME Abstract A dynamic memory obtains reduced leakage currents through the access transistors by preventing the low-going column conductors from reaching zero volts for at least a majority of the duration of the active portion of a memory cycle. The low-going conductors are optionally allowed to reach zero volts during the refresh operation. One advantage is a possible increase in the data storage time between required refresh operations.

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