H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/199, 352/82.
H01L 27/108 (2006.01) H01L 21/285 (2006.01) H01L 21/8242 (2006.01)
Patent
CA 1289243
ABSTRACT A one-device shared trench memory cell, in which the polysilicon and dielectric layers within the trench extend above the surface of the trench to form a mandrel structure. A layer of polysilicon is conform- ably deposited on the mandrel structure. Dopant ions are diffused from the doped polysilicon within the trench to the conformal polysilicon layer, and from the conformal polysilicon layer, and from the conformal polysilicon layer to a portion of the substrate dis- posed thereunder. The conformal polysilicon is etched in a solvent that preferentially attacks undoped polysilicon, to provide and is a bridge contact that is self-aligned to the polysilicon within the trench and to the diffusion region. A plurality of FETs formed on either side of the trench, by use of a sidewall-defined gate electrode to maximize density. The cell produces a "poly-to-poly" and "poly-to-substrate" storage capacitor combination that maximizes charge storage capability.
549648
International Business Machines Corporation
Saunders Raymond H.
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