H - Electricity – 01 – L
Patent
H - Electricity
01
L
352/82.1
H01L 27/10 (2006.01) G11C 11/34 (2006.01) G11C 11/40 (2006.01)
Patent
CA 1228425
DYNAMIC RAM CELL WITH MOS TRENCH CAPACITOR IN CMOS Abstract of the Disclosure This invention relates generally to Dynamic Random Access Memory (DRAM) cells and more particularly relates to a DRAM cell wherein the storage capacitor of the cell is disposed in a trench formed in a semiconductor substrate. Still more particularly, it relates to a DRAM cell wherein at least a portion of the substrate is heavily doped and forms the counterelectrode of the storage capacitor while a heavily doped polycrystalline plug disposed in the trench capacitor forms the other electrode of the storage capacitor. The DRAM cell includes a field effect access transistor disposed in a well which is opposite in conductivity type to that of the sub- strate. The well itself is formed in a lightly doped portion of the substrate and may be n or p-type conductivity with the other portions of the cell having conductivity types appropriate for devices fabricated in the CMOS environment. The trench capacitor extends from the surface of the well through the well and lightly doped substrate portion into the heavily doped portion of the substrate. The electrode disposed in the trench is directly connected to the source/drain of the access transistor.
478628
Lu Nicky C.
Ning Tak H.
Terman Lewis M.
International Business Machines Corporation
Rosen Arnold
LandOfFree
Dynamic ram cell with mos trench capacitor in cmos does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Dynamic ram cell with mos trench capacitor in cmos, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dynamic ram cell with mos trench capacitor in cmos will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1175618