Dynamic ram having buried capacitor and planar gate

Details Dynamic ram having buried capacitor and planar gate Dynamic ram having buried capacitor and planar gate

G - Physics

11

C

352/82.3, 352/82

G11C 11/40 (2006.01) G11C 11/404 (2006.01) H01L 21/225 (2006.01) H01L 21/74 (2006.01) H01L 21/763 (2006.01) H01L 27/108 (2006.01)

Patent

CA 1144646

- 18 - SEMICONDUCTOR MEMORY DEVICE AND PROCESS FOR FABRICATING THE SAME ABSTRACT OF THE DISCLOSURE A one transistor, one capacitance type dynamic MOS?RAM is provided with a buried storage capacitor and a planar transfer electrode. The MOS?RAM is, therefore, characterized by a small size of the memory cells and a simple production process. One process feature of the present invention is that a quick diffusion through a polycrystalline silicon is employed for forming a vertical connection between the buried storage capaciitor and the source or drain of the MOS transistor.

335866

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