Dynamic random access memory with trench capacitor

Details Dynamic random access memory with trench capacitor Dynamic random access memory with trench capacitor

G - Physics

11

C

356/199, 352/82.

G11C 11/34 (2006.01) H01L 21/82 (2006.01) H01L 21/8242 (2006.01) H01L 27/10 (2006.01) H01L 27/108 (2006.01)

Patent

CA 1261469

SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR PRODUCING THE SAME ABSTRACT OF THE DISCLOSURE A semiconductor memory device including a semicon- ductor substrate comprising; a field oxide layer selec- tively formed on the semiconductor substrate; a capacitor including an insulating layer formed on the surface of a trench formed in such a manner that at least an edge portion of the field oxide layer is removed, a conductive layer formed on the insulating layer, a dielectric layer formed on the conductive layer and an electrode formed on the dielectric layer.

497695

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