Dynamic semiconductor memory cell and method for its...

Details Dynamic semiconductor memory cell and method for its... Dynamic semiconductor memory cell and method for its...

G - Physics

11

C

352/82.3

G11C 11/40 (2006.01) G11C 11/404 (2006.01) H01L 21/8242 (2006.01) H01L 27/108 (2006.01)

Patent

CA 1149512

ABSTRACT OF THE DISCLOSURE A dynamic semiconductor memory cell increases integration density in that the transfer gate has minimum dimensions and a smaller transfer channel length. The threshold voltage of the field effect transistor is largely independent of fluctuations of the substrate bias voltage and the capacitance of the memory capacitor is increased with respect to the predetermined semiconductor surface in comparison to traditional memory cells. The method of manufacture is also disclosed.

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