Edge ring termination for silicon carbide devices

Details Edge ring termination for silicon carbide devices Edge ring termination for silicon carbide devices

H - Electricity

01

L

H01L 29/06 (2006.01) H01L 29/24 (2006.01)

Patent

CA 2512580

Edge termination for silicon carbide devices has a plurality of concentric floating guard rings in a silicon carbide layer that are adjacent and spaced apart from a silicon carbide-based semiconductor junction. An insulating layer, such as an oxide, is provided on the floating guard rings and a silicon carbide surface charge compensation region is provided between the floating guard rings and is adjacent the insulating layer. Methods of fabricating such edge termination are also provided.

On décrit une terminaison latérale pour dispositifs en carbure de silicium, qui comprend, dans une couche de carbure de silicium, plusieurs anneaux de garde flottants concentriques, adjacents et espacés d'une jonction semi-conductrice à base de carbure de silicium. Une couche isolante, telle qu'un oxyde, est disposée sur les anneaux de garde flottants et une zone de compensation de charge de la surface du carbure de silicium est ménagée entre les anneaux de garde flottants et jouxte la couche isolante. L'invention concerne en outre des procédés de fabrication de ladite terminaison latérale.

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