Edgeless transistor

Details Edgeless transistor Edgeless transistor

H - Electricity

01

L

356/74

H01L 27/12 (2006.01) H01L 23/31 (2006.01) H01L 29/78 (2006.01) H01L 29/786 (2006.01)

Patent

CA 1058770

EDGELESS TRANSISTOR Abstract An MOS mesa transistor wherein the sidewalls of the mesa are electrically isolated from a device formed on the principal surface of the mesa, is provided. The mesa is com- prised of a source and a drain which do not extend to a side- wall of the mesa. The source and the drain are surrounded by a band of semiconductor material which is a portion of the mesa and which electrically isolates the source and the drain from the sidewalls of the mesa.

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