Elecroluminescent gallium phosphide device and manufacturing...

Details Elecroluminescent gallium phosphide device and manufacturing... Elecroluminescent gallium phosphide device and manufacturing...

H - Electricity

01

L

345/51

H01L 21/306 (2006.01) H01L 21/30 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1064152

ABSTRACT OF THE DISCLOSURE When gallium phosphide is etched with hot phosphoric acid from the surface of a crystal having a Image plane, the etched surface becomes a flat and smooth plane inclined at an angle of 45 to 55 degrees to said Image plane. Accordingly, when an electroluminescent diode is manufactured by forming a p-n junction on a gallium phosphide crystal having a Image plane and etching the crystal with said hot concentrated phos- phoric acid etching solution to form a mesa structure, the side faces of the resulting crystal become inclined to the plane of junction at an angle of nearly 45 degrees so that the visible rays generated in said p-n junction are totally reflected on said side faces, thus markedly increasing the intensity of emitted rays in the direction of the optical axis perpendicular to the principal plane of said p-n junction.

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