Electric device of hydrogenated amorphous silicon and method...

Details Electric device of hydrogenated amorphous silicon and method... Electric device of hydrogenated amorphous silicon and method...

H - Electricity

01

L

H01L 31/20 (2006.01) H01L 31/0224 (2006.01) H01L 31/105 (2006.01)

Patent

CA 2045954

ABSTRACT OF THE DISCLOSURE Electro-migration of electrode metal takes place under an elevated temperature condition in amorphous silicon devices having conventional PI-type, NI-type, or PIN-type hydrogenated amorphous silicon layered structures, which substantially degrades the electrical characteristics of the device. This problem is solved by forming a chemically inactive layer consisting mainly of amorphous silicon oxide on the surface of amorphous silicon layer by a washing and drying process, to establish electrical contact through the chemically inactive layer between the hydrogenated amorphous silicon layer and either a collector electrode or a transparent electrode. This structure not only substantially prevents such electromigration of electrode metal, but it also allows greater freedom in choosing a material for the collector electrode.

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