C - Chemistry – Metallurgy – 04 – B
Patent
C - Chemistry, Metallurgy
04
B
25/133, 261/6
C04B 35/56 (2006.01) C04B 35/575 (2006.01) H01L 23/15 (2006.01)
Patent
CA 1256459
ABSTRACT OF THE DISCLOSURE The invention is an electrically insulating sintered polycrystalline silicon carbide and a sintering aid consisting essentially of at least 95.0% by weight silicon carbide, 0.25 to 3.5% by weight aluminum oxide and/or magnesium oxide, up to 0.3% by weight free carbon and up to 0.03% by weight impurities due to elements of groups 3a and 5a of the Periodic System (predominantly A1 + B + N) in total, wherein the SiC has an essentially homogeneous isotropic microstructure with grain sizes of at most 5 µm, aluminum oxide and/or magnesium oxide are present predominantly at the grain boundaries of the SiC and are detectable as separate phase(s) having the following properties; thermal conductivity of at least 170 W/mk, specific electric resistance of at least 109 Ohm.cm, thermal expansion coefficient of up to 3.5 x 10-6/K and dielectric strength of 20 KV/mm. Said substrate materials are formed from a homogeneous powder mixtures of SiC with a purity of at least 99.97% by weight based on impurities due predominantly to A1 + B + N and 0.25 to 3.5% by weight aluminum oxide and/or magnesium oxide by isostatic hot pressing in a hermetically sealed casing at from 1700° to 2200°C and from 100 to 400 MPa using an inert gas as a pressure-transmitting medium.
539761
Grellner Wolfgang
Hunold Klaus
Matje Peter
Mohr Max
Elektroschmelzwerk Kempten G.m.b.h.
Gowling Lafleur Henderson Llp
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