H - Electricity – 03 – K
Patent
H - Electricity
03
K
356/58
H03K 19/20 (2006.01) H01L 27/02 (2006.01) H01L 27/07 (2006.01) H01L 27/08 (2006.01) H03K 19/12 (2006.01)
Patent
CA 1060587
ABSTRACT OF THE DISCLOSURE A bipolar S3TL-gate (Small Swing Schottky Transistor Logic) is proposed, in which two Schottky diodes, mutually differing either in area, but with a low start voltage are employed using identical processing for metallization, and/or mutually differing doping levels of the silicon surface, preferably effected by means of ion implantation. -1-
253926
Rathbone Ronald
Rydval Peter
Schwabe Ulrich
Aktiengesellschaft Siemens
Na
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