Electrical contact in semiconductor devices

Details Electrical contact in semiconductor devices Electrical contact in semiconductor devices

H - Electricity

01

L

356/174

H01L 23/48 (2006.01) H01L 21/768 (2006.01) H01L 23/485 (2006.01)

Patent

CA 1225466

- 14 - ELECTRICAL CONTACT IN SEMICONDUCTOR DEVICES Abstract Contacting an underlying region (e.g. doped silicon) through an access hole in an overlying dielectric layer (e.g., p-glass) formerly required flowing the dielectric to smooth the edges of the hole, so that aluminum would deposit smoothly into the hole. The present technique smoothes the side of the hole by forming a smoothing region on the sidewall. Improved aluminum coverage results, as well as allowing a smaller contact head, if desired. Improved contact resistance can be optionally provided by depositing a more conductive layer on the underlying layer prior to forming the sidewall.

489006

Affiliated with

Also associated with

Rating

Electrical contact in semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electrical contact in semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrical contact in semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1182546