G - Physics – 11 – C
Patent
G - Physics
11
C
356/23, 352/82.2
G11C 17/00 (2006.01) H01L 29/78 (2006.01) H01L 29/788 (2006.01)
Patent
CA 1267726
Abstract An Electrically Alterable Non-Volatile Memory Device In this invention, an Electrically Alterable Non- Volatile Memory (EANOM) cell is disclosed. The EANOM cell comprises an MOS transistor, having a source, a gate and a drain. The EANOM cell also has a two- terminal tunnel device, one end of which is connected to the gate of the MOS transistor. The other terminal being labelled "T". The tunnel device causes charges to be stored or removed from the gate of the MOS transistor. In a preferred embodiment, a four-terminal EANOM cell is disclosed. The four terminals of the EANOM cell are terminals T, S (source of the MOS transistor), D (drain of the MOS transistor) and a terminal C which is capacitively coupled to the gate of the MOS transistor. The EANOM cell can be used in a memory circuit to increase the reliability thereof. Two or more EANOM cells are connected in tandem and operate simultaneously. Catastrophic failure of one EANOM cell results in an open circuit with the other EANOM cell continuing to function.
526446
Chiu Te-Long
Nolan Joseph G.
Shum Ying K.
Van Buskirk Michael A.
Sierra Semiconductor Corporation
Smart & Biggar
LandOfFree
Electrically alterable non-volatile memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electrically alterable non-volatile memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrically alterable non-volatile memory device will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1285238