Electrically erasable mosfet storage device

Details Electrically erasable mosfet storage device Electrically erasable mosfet storage device

G - Physics

11

C

356/149, 352/82

G11C 11/34 (2006.01) G11C 16/14 (2006.01) H01L 29/788 (2006.01)

Patent

CA 1166353

ABSTRACT A field effect transistor storage device for use in programmable read-only memories of the type employing a floating gate (16) and a control gate (20) overlying and aligned with the floating gate. An erase gate (24) is pro- vided adjacent at least one edge (26) of the floating gate (16) for removing charge stored on the floating gate. A method of electrically erasing the storage device includes holding the control gate (20) at a fixed potential to thereby hold the floating gate (16) at a substantially fixed potential while a relatively low voltage is applied to the erase gate (24) to remove charge stored on the floating gate.

373061

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