Electrically erasable nonvolatile memory

Details Electrically erasable nonvolatile memory Electrically erasable nonvolatile memory

G - Physics

11

C

G11C 16/06 (2006.01) G11C 16/04 (2006.01) G11C 16/14 (2006.01)

Patent

CA 2286125

A nonvolatile memory cell which is highly scalable includes a cell formed in a triple well. The control gate is negatively biased. By biasing the P-well and drain (or source) positively within a particular voltage range when erasing, GIDL current and degradation from hole trapping can be diminished and hence a highly scalable technology may be achieved.

On décrit une cellule de mémoire permanente à géométrie très variable, qui comprend une cellule formée dans un puits triple. La grille de contrôle est polarisée négativement. En polarisant le puits de type p et le drain (ou la source) positivement, dans les limites d'une plage de tension particulière pendant l'effaçage, on peut réduire le courant de fuite dans le drain induit par la grille (GIDL) et la dégradation dus à la capture par trous, ce qui permet de réaliser une technologie à géométrie très variable.

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