Electrically erasable phase change memory

Details Electrically erasable phase change memory Electrically erasable phase change memory

G - Physics

11

C

G11C 11/56 (2006.01) G11C 11/00 (2006.01) G11C 16/02 (2006.01) H01L 27/115 (2006.01) H01L 27/24 (2006.01) H01L 45/00 (2006.01)

Patent

CA 2059476

An electrically erasable phase change memory utilizing a stoichiometrically balanced phase change material in which both the switching times and the switching energies required for the transitions between the amorphous and the crystalline states are substantially reduced below those attainable with prior art electrically erasable phase change memories. One embodiment of the invention comprises an integrated circuitimplementation of the memory in a high bit density configuration in which manufacturing costs are correspondingly reduced and performance parameters are further improved.

Affiliated with

Also associated with

Rating

Electrically erasable phase change memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electrically erasable phase change memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrically erasable phase change memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1847489