Electrically erasable programmable read-only memory

Details Electrically erasable programmable read-only memory Electrically erasable programmable read-only memory

G - Physics

11

C

354/242, 352/40,

G11C 11/40 (2006.01) G11C 8/12 (2006.01) G11C 16/04 (2006.01) G11C 16/08 (2006.01) G11C 16/16 (2006.01) G11C 16/34 (2006.01)

Patent

CA 1185369

ABSTRACT An electrically erasable programmable read-only memory (E2PROM) is provided which utilizes an inhibit voltage applied to unselected word lines during writing to prevent writing in unselected rows. In the preferred embodiment, each memory cell of the E2PROM array consists of a single floating gate field effect transistor. The E2PROM of the present invention provides for row erasure and single bit writing.

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