Electrode and semiconductor device provided with the electrode

Details Electrode and semiconductor device provided with the electrode Electrode and semiconductor device provided with the electrode

H - Electricity

01

L

356/172

H01L 29/40 (2006.01) H01L 21/285 (2006.01) H01L 23/532 (2006.01) H01L 29/45 (2006.01)

Patent

CA 1171977

- 20 - Abstract of the Disclosure A semiconductor layer is formed on at least one portion of a silicon substrate. The layer is made of poly-crystalline or amorphous multicomponent containing silicon, at least one element of Group IV having an ato- mic radius larger than that of silicon, such as ger- manium or tin, and doner impurity or acceptor impurity.

386975

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