Electrode forming method for surface acoustic wave device

Details Electrode forming method for surface acoustic wave device Electrode forming method for surface acoustic wave device

H - Electricity

03

H

H03H 3/007 (2006.01) H03H 3/08 (2006.01) H03H 9/02 (2006.01)

Patent

CA 2137307

An electrode forming method for a surface acoustic wave device is adapted to form a film of an electrode material on a piezoelectric substrate to be crystallographically oriented in a constant direction while carrying out ion assistance at prescribed ion energy, in a film formation process employing a film forming method such as evaporation, sputtering, IBS (ion beam sputtering), CVD (chemical vapor deposition), plasma CVD, MBE (molecular beam epitaxy), ICB (ionized cluster beam) or laser ablation.

On adapte une méthode de mise en forme d'électrode destinée à un dispositif d'onde acoustique de surface, afin de former un film en matière pour électrode sur un substrat piézoélectrique dont les cristaux devront se retrouver dans une direction constante alors qu'on dépose le film, avec une assistance ionique d'énergie ionique déterminée, à l'aide d'un procédé de formation de film, comme l'évaporation, la pulvérisation, la pulvérisation au canon à ions, le dépôt chimique en phase vapeur, le dépôt chimique en phase vapeur par plasma, l'épitaxie en faisceau moléculaire, le bombardement par faisceau d'amas moléculaires ionisés ou l'ablation au laser.

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