Electrode structure for a semiconductor device

Details Electrode structure for a semiconductor device Electrode structure for a semiconductor device

H - Electricity

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H01L 29/08 (2006.01) H01L 23/482 (2006.01) H01L 29/45 (2006.01) H01L 29/47 (2006.01) H01L 29/861 (2006.01) H01L 29/868 (2006.01)

Patent

CA 1150417

Abstract of the Disclosure An electrode structure for use in semiconductor devices comprising: a semiconductive layer; a conductive layer disposed on one surface of the semiconductive layer; first regions which intervene between the layers and serve as passages for transmitting minority carriers from the semi- conductive layer to the conductive layer; and second regions which intervene between the layers and serve as passages for conveying majority carriers between the semiconductive layer and conductive layer, the first and second regions being selectively formed on the semiconductive layer so as to be adjacent to one another.

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