Electrode structure for iii-v compound semiconductor element...

Details Electrode structure for iii-v compound semiconductor element... Electrode structure for iii-v compound semiconductor element...

H - Electricity

01

L

356/172, 148/3.4

H01L 21/28 (2006.01) H01L 21/285 (2006.01) H01L 21/324 (2006.01) H01L 23/485 (2006.01) H01L 29/45 (2006.01)

Patent

CA 2019026

The present invention relates to an electrode structure formed on a III-V compound semiconductor element and a method for manufacturing the same and an object thereof is to provide an electrode which exhibits a high wire bonding strength, a low ohmic contact resistance, and high reliability, and is easy to shape itself. The electrode structure of the present invention is formed by annealing after the formation of a laminated structure having an ohmic layer including at least Ni formed on the III-V compound semiconductor element, a bonding layer to be connected with a bonding wire, a stopper layer provided between the ohmic layer and the bonding layer and an isolation layer provided between the stopper layer and the ohmic layer.

Structure d'électrode formée sur un élément semiconducteur en composé III-V et méthode de fabrication connexe qui a pour objet de produire une électrode qui présente une forte résistance de liaison de microcâblage, une faible résistance ohmique de contact et une grande fiabilité et qui se forme facilement. La structure d'électrode est formée par recuit après la formation d'un laminé ayant une couche ohmique comprenant au moins du Ni et formée sur l'élément semiconducteur en composé III-V, une couche de liaison à connecter à un conducteur de masse, une couche d'arrêt entre la couche ohmique et la couche de liaison, et une couche d'isolement entre la couche d'arrêt et la couche ohmique.

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