Electrodeposition on semiconductor material

Details Electrodeposition on semiconductor material Electrodeposition on semiconductor material

C - Chemistry, Metallurgy

25

D

356/176

C25D 5/02 (2006.01) C25D 5/54 (2006.01) C25D 7/12 (2006.01) H01L 21/00 (2006.01) H01L 21/228 (2006.01) H01L 21/268 (2006.01) H01L 21/288 (2006.01) H01L 21/304 (2006.01) H01L 21/3063 (2006.01)

Patent

CA 1047654

A B S T R A C T This invention relates to a method of depositing material onto a semiconductor including the steps of:- (1) Disturbing the lattice structure in or near the surface of the semiconductor, (2) Immersing the semiconductor in an appropriate plating solution, (3) Supplying radiative energy to the semiconductor, the said radiative energy consisting at least partially of wavelengths sufficiently short to generate free charge carriers in the said semiconductor, in order to deposit material from the plating solution onto at least part of the surface of the semiconductor. The present invention provides a particularly cheap and suit- able process by which metal contacts may be provided on semiconductor mater- ials.

237781

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