H - Electricity – 05 – B
Patent
H - Electricity
05
B
H05B 33/00 (2006.01) H01L 33/00 (2006.01) H05B 33/10 (2006.01)
Patent
CA 2215708
An electroluminescent device (10) comprises a porous silicon region (22) adjacent a bulk silicon region (20), together with a top electrical contact (24) of transparent indium tin oxide and a bottom electrical contact (26) of aluminium. The device includes a heavily doped region (28) to provide an ohmic contact. The porous silicon region (22) is fabricated by anodizing through an ion-implanted surface layer of the bulk silicon. The silicon remains unannealed between the ion-implantation and anodization stages. The device (10) has a rectifying p-n junction within the porous silicon region (22).
L'invention concerne un dispositif électroluminescent (10) ayant une région de silicium poreux (22) jouxtant une région de silicium compact (20), un contact électrique supérieur transparent (24) en oxyde d'étain et d'indium et un contact inférieur (26) en aluminium. Le dispositif comprend une région (28) lourdement dopée (28) pour assurer le contact ohmique. La région de silicium poreux (22) est fabriquée par anodisation du silicium compact au niveau d'une couche de surface ayant subi une implantation d'ions. Le silicium ne subit pas de recuisson entre les étapes d'implantation d'ions et d'anodisation. Le dispositif (10) a une jonction de redressement p-n dans la région du silicium poreux (22).
Blacker Richard Simon
Canham Leigh Trevor
Cox Timothy Ingram
Loni Armando
Simons Andrew John
Fetherstonhaugh & Co.
Qinetiq Limited
The Secretary Of State For Defence In Her Britannic Majesty's Go
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