C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
204/96.1
C23C 14/02 (2006.01) C09K 11/54 (2006.01) H05B 33/14 (2006.01) H05B 33/22 (2006.01) H05B 33/28 (2006.01)
Patent
CA 1228329
ABSTRACT ELECTROLUMINESCENT DEVICE: METHOD & PRODUCT A method of electroluminescent panel manufacture in which a doped zinc chalcogenide phospher film - for example manganese doped zinc sulphide, is deposited upon an electrode bearing substrate in the presence of an hydrogen enriched atmosphere - for example a 90%:10% argon:hydrogen atmosphere. This is followed by rapid anneal treatment, the substrate being raised quickly to a temperature of 450°C, or greater, and cooled rapidly. It is preferable that, prior to film deposition, the substrate is pretreated by baking in the hydrogen enriched atmosphere. An additional current density limiting film may be applied - a film of low resistance cermet material - for example silica/nickel 20% Ni in SiO2, or a film of amorphous silicon.
459881
Cattell Alan F.
Kirton John
Lloyd Peter
Gowling Lafleur Henderson Llp
Qinetiq Limited
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