Electroluminescent gallium nitride semiconductor device and...

Details Electroluminescent gallium nitride semiconductor device and... Electroluminescent gallium nitride semiconductor device and...

H - Electricity

01

L

345/50

H01L 31/12 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1098609

ABSTRACT: An electroluminescent device having a structure of the kind M I N with improved efficiencies. The device is characterized especially by an N-type gallium nitride layer portion in which donnor impurities are compensated gradually by a dopant having acceptor properties and adjoining the active gallium nitride layer which is fully compensated. A novel method permits of obtaining between the layer portion and the active layer a transi- tion having a net concentration of impurities which can be controlled easily and in a reproducible manner. Application: visualisation of data. -65-

286589

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