Electron beam addressed memory

Details Electron beam addressed memory Electron beam addressed memory

H - Electricity

01

J

352/82.4

H01J 31/60 (2006.01) H01J 1/30 (2006.01) H01J 1/308 (2006.01) H01J 29/41 (2006.01) H01J 29/44 (2006.01)

Patent

CA 1276295

ABSTRACT Electron Beam Addressed Memory An electron beam addressed memory (EBAM) comprising an envelope (10) within which are provided a source of an electron beam, a microcapacitor target (18) and means (24) for receiving, amplifying and detecting a secondary electron beam produced in response to scanning the target (18) by the electron beam in the read mode. In previous designs of EBAMs tungsten filaments or dispenser cathodes have been used for producing the electron beam but if these are replaced by a cold semiconductor cathode (12) it 18 possible to obtain an electron beam of small cross-sectional size, having a high current density and can be switched on and off at frequencies up to at least 30MHz. The means for receiving, amplifying and detecting the secondary electrons produced in the reading operation comprises in the embodiment illustrated an annular microchannel plate electron multiplier (24) disposed about, and coplanarly with, the target (18). (Figure 9).

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