Electron beam apparatus comprising a semiconductor electron...

Details Electron beam apparatus comprising a semiconductor electron... Electron beam apparatus comprising a semiconductor electron...

H - Electricity

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H01J 1/30 (2006.01) H01J 1/308 (2006.01) H01J 3/02 (2006.01) H01J 37/07 (2006.01) H01J 37/073 (2006.01)

Patent

CA 1254307

PHN 11.233 10 04.03.1985 ABSTRACT: Electron beam apparatus comprising a semiconductor electron emitter. An electron beam apparatus comprising a semiconductor elec- tron emitter whose emissive surface dimensions are determined by dimensions of a p-n junction provided in the semiconductor element. By optimizing the dimensions of the emissive surface in relation to the electron-optical properties of the apparatus, an emitter is realized which combines optimum beam formation or imaging with a sufficiently large beam current and a high beam current density as required by the apparatus.

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