Electron beam enhanced surface modification for making...

Details Electron beam enhanced surface modification for making... Electron beam enhanced surface modification for making...

H - Electricity

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356/176, 148/3

H01L 21/30 (2006.01) C23C 8/10 (2006.01) C23F 4/00 (2006.01) G03F 7/004 (2006.01) G03F 7/20 (2006.01) G11B 7/24 (2006.01) G11B 9/10 (2006.01) G11B 11/00 (2006.01) H01L 21/223 (2006.01) H01L 21/225 (2006.01) H01L 21/263 (2006.01) H01L 21/312 (2006.01) H01L 21/768 (2006.01)

Patent

CA 1226376

ABSTRACT A method for forming high resolution submicron structures on a substrate is provided by direct writing with a submicron electron beam in a partial pressure of a selected gas phase characterized by the ability to dissociate under the beam into a stable gaseous leaving group and a reactant fragment that combines with the substrate material under beam energy to form at least a surface compound. Variations of the method provide semiconductor device regions on doped silicon substrates, interconnect lines between active sites, three dimensional electronic chip structure, electron beam and optical read mass storage devices that may include color differentiated data areas, and resist areas for use with selective etching technique.

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