Electron beam exposed positive resist mask process

Details Electron beam exposed positive resist mask process Electron beam exposed positive resist mask process

G - Physics

03

F

96/219

G03F 7/26 (2006.01) G03F 7/09 (2006.01) G03F 7/30 (2006.01) G03F 7/40 (2006.01)

Patent

CA 1173689

Electron Beam Exposed Positive Resist Mask Process Abstract An E-beam lithography process for forming via holes in insulating layers, such as quartz, on semiconductor devices. Where quartz is used, an underlayer of an adhesion promoter is used (e.g. KMR resist which is desensitized by heating) followed by overcoating with an E-beam sensitive positive image resist layer of the novolak/diazo- benzophenone family. After exposure with an E- beam the development is performed at low tem- peratures (e.g. 14°C) with end-point detection to indicate a further degree of overdevelopment, followed by controlled heating to post-bake of the image resist to obtain round and properly tapered via holes. FI9-81-038

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