Electron beam micro/nano fabrication method

Details Electron beam micro/nano fabrication method Electron beam micro/nano fabrication method

H - Electricity

01

L

H01L 21/302 (2006.01) H01L 21/461 (2006.01)

Patent

CA 2526794

An electron beam microprocessing method is disclosed wherein the surface of an AlxGayIn1-x-yAszP1-z (0 <= x, y, z <= 1) layer containing GaAs as a simple substance and an InP substrate is irradiated with an electron beam having arbitrary electron beam diameter and current density, so that a natural oxide film formed on the AlxGayIn1-x-yAszP1-z layer surface is selectively substituted with or formed into Ga2O3, and then the AlxGayIn1-x-yAszP1-z layer surface is dry-etched using a bromide in single atom layer unit, thereby removing the natural oxide film other than the portion substituted with Ga2O3 and the AlxGayIn1-x-yAszP1-z substrate.

L'invention concerne un procédé de micro traitement d'un faisceau d'électrons, la surface d'une couche Al¿x?Ga¿y?In¿1-x-y?As¿z?P¿1-z? (0 < x, y, z< 1) contenant GaAs en tant que substance simple et un substrat InP étant irradiée par un faisceau d'électrons présentant un diamètre de faisceau d'électrons et une densité de courant arbitraires, si bien qu'un film d'oxyde naturel formé sur la surface de la couche Al¿x?Ga¿y?In¿1-x-y?As¿z?P¿1-z? est sélectivement substitué par Ga¿2?O¿3? ou formé dans Ga¿2?O¿3?, puis la surface de la couche Al¿x?Ga¿y?In¿1-x-y?As¿z?P¿1-z? est gravée au plasma au moyen d'un bromure dans une seule unité de couche atomique, ce qui permet d'ôter le film d'oxyde naturel plutôt que la partie substituée par Ga¿2?O¿3? et le substrat Al¿x?Ga¿y?In¿1-x-y?As¿z?P¿1-z?.

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