Electron beam peripheral patterning of integrated circuits

Details Electron beam peripheral patterning of integrated circuits Electron beam peripheral patterning of integrated circuits

G - Physics

03

F

356/136

G03F 7/20 (2006.01) H01J 37/302 (2006.01)

Patent

CA 1210161

ABSTRACT Silicon wafers are imprinted with micro-electronic circuit patterns by first lithographing the outlines or peripheries of all circuit features of a given wafer level by means of a narrow line formed by direct writing electron beam lithography utilizing a positive electron resist, then using proximity photoprinting to complete the lithography of that level using a positive photoresist and a photomask with oversized opaque areas so that the pattern edges on the wafer exposed to the flux passing through the photomask will fall within the peripherial lines formed by the electron beam.

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