Electron beam process during damascene processing

Details Electron beam process during damascene processing Electron beam process during damascene processing

H - Electricity

01

L

H01L 21/768 (2006.01) H01L 23/522 (2006.01)

Patent

CA 2368265

A process for the formation of structures in microelectronic devices such as integrated circuit devices. Vias, interconnect metallization and wiring lines are formed using single and dual damascene techniques wherein dielectric layers are treated with a wide electron beam exposure.

La présente invention concerne un procédé de formation de structures dans des dispositifs microélectroniques, tels que des dispositifs à circuits intégrés. Des trous d'interconnexion, des métallisations d'interconnexion et des lignes de câblage sont formés à l'aide de techniques à un seul damasquinage et à double damasquinage, dans lesquelles les couches diélectriques sont traitées par exposition à un grand faisceau électronique.

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