Electron beam sensitized resist containing polymerized...

Details Electron beam sensitized resist containing polymerized... Electron beam sensitized resist containing polymerized...

G - Physics

03

F

96/252, 204/91.3

G03F 7/039 (2006.01) G03F 7/075 (2006.01)

Patent

CA 1303549

Abstract of the Disclosure Poly(alkenyltrialkylsilane sulfone)s have been found to be electron beam sensitive and suitable for use as positive resists in a two layer resist system. The described resists are prepared by the polymerization of an .omega.-alkenyltrimethylsilane with sulfur dioxide with or without a second solubilizing olefinic compound. The resultant composition evidences high sensitivity, excellent resolution characteristics and excellent resistance to oxygen reactive-ion etching. We have attained sensitivity to either electron beams or midultraviolet radiation.

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