Electron beam sterilization method

A - Human Necessities – 61 – M

Patent

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Details

A61M 1/18 (2006.01) A61L 2/08 (2006.01)

Patent

CA 2694904

[PROBLEMS] To provide an efficient sterilization method for inexpensively sterilizing a medical article having a complex shape such as a body fluid treatment device of a generally-called dry or semi-dry type by so applying an electron beam that the overall absorbed dose distribution is small and to provide its application package form. [MEANS FOR SOLVING PROBLEMS] A method for sterilizing tubular body fluid treatment devices of a dry or semi- dry type contained in an electron beam-transmitting case with an electron beam. The method is characterized in that a stack structure which includes a gap layer having an average density of 0.010 to 0.180 g/cm3 and two body fluid treatment device layers having an average density of 0.050 to 0.200 g/cm3 and sandwiching the gap layer is contained in the electron beam-transmitting case, and the case is irradiated with the electron beam.

L'invention vise à proposer un procédé de stérilisation efficace pour stériliser de façon non coûteuse un article médical ayant une forme complexe, tel qu'un dispositif de traitement de fluide corporel d'un type généralement appelé sec ou semi-sec, par application d'un faisceau d'électrons, de telle sorte que la distribution de dose absorbée globale est faible et vise aussi à proposer sa forme de conditionnement d'application. A cet effet, l'invention porte sur un procédé de stérilisation des dispositifs de traitement de fluide corporel tubulaires d'un type sec ou semi-sec contenus dans un boîtier transmettant les faisceaux d'électrons par un faisceau d'électrons. Le procédé est caractérisé par le fait qu'une structure de pile, qui comprend une couche d'espace ayant une densité moyenne de 0,010 à 0,180 g/cm3 et deux couches de dispositif de traitement de fluide corporel ayant une densité moyenne de 0,050 à 0,200 g/cm3 et prenant en sandwich la couche d'espace, est contenue dans le boîtier de transmission de faisceaux d'électrons, et le boîtier est irradié par le faisceau d'électrons.

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