H - Electricity – 01 – J
Patent
H - Electricity
01
J
H01J 9/02 (2006.01) H01J 1/316 (2006.01)
Patent
CA 2418595
An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film arranged between the electrodes and including a high resistance region. The high resistance region has a deposit containing carbon as a principal ingredient. The electron-emitting device can be used for an electron source of an image-forming apparatus of the flat panel type.
Banno Yoshikazu
Mitome Masanori
Nomura Ichiro
Ohnishi Toshikazu
Ono Takeo
Canon Kabushiki Kaisha
Ridout & Maybee Llp
LandOfFree
Electron-emitting device and method of manufacturing the... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electron-emitting device and method of manufacturing the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electron-emitting device and method of manufacturing the... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1718636