H - Electricity – 01 – J
Patent
H - Electricity
01
J
H01J 19/02 (2006.01) H01J 1/316 (2006.01) H01J 9/02 (2006.01)
Patent
CA 2155062
In an electron-emitting device including, between electrodes, an electroconductive film having an electron emitting region, the electroconductive film has a film formed in the electron emitting region and made primarily of a material having the higher melting point than that of a material of the electroconductive film. Alternatively, the electroconductive film has a film formed in the electron emitting region and made primarily of a material having a higher temperature, at which the material develops a vapor pressure of 1.3 x 10-3 Pa, than that of a material of the electroconductive film. A manufacture method of an electron-emitting device includes a step of forming a film made primarily of a metal in the electron emitting region of the electroconductive film. The electron-emitting device has stable characteristics and improved efficiency of electron emission. An image-forming apparatus comprising the electron-emitting devices has high luminance and excellent stability in operation.
Hamamoto Yasuhiro
Iwasaki Tatsuya
Tsukamoto Takeo
Yamamoto Keisuke
Yamanobe Masato
Canon Kabushiki Kaisha
Ridout & Maybee Llp
LandOfFree
Electron-emitting device, electron source and image-forming... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electron-emitting device, electron source and image-forming..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electron-emitting device, electron source and image-forming... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1536709