Electron gas hole gas tunneling transistor device

Details Electron gas hole gas tunneling transistor device Electron gas hole gas tunneling transistor device

H - Electricity

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356/119

H01L 29/161 (2006.01) H01L 29/10 (2006.01) H01L 29/739 (2006.01) H01L 29/778 (2006.01)

Patent

CA 1265626

Abstract A semiconductor device comprises a first semiconductor layer, a second semiconductor layer, and a third semi- conductor layer formed between the first and second semi- conductor layers and having a band gap narrower than that of each of the first and second layers. Band discontinuities in conduction bands and valence bands of the three layers form a barrier to the third semiconductor layer, and a tunneling current flows through the third semiconductor layer due to an internal electric field of the third semiconductor layer. The result is a device of ultrahigh speed operation.

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