Electron irradiation of high level transistors

Details Electron irradiation of high level transistors Electron irradiation of high level transistors

H - Electricity

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L

356/163

H01L 21/42 (2006.01) H01L 21/263 (2006.01) H01L 29/167 (2006.01)

Patent

CA 1165467

47,661 ABSTRACT OF THE DISCLOSURE A method for reducing storage time and gain parameters in a semiconductor transistor includes the step of irradiating the transistor with a predetermined elec- tron fluence for optimizing the relation of gain and storage time.

372536

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