H - Electricity – 03 – K
Patent
H - Electricity
03
K
328/95
H03K 3/353 (2006.01) H01L 27/06 (2006.01) H03K 3/011 (2006.01) H03K 3/354 (2006.01) H03K 17/14 (2006.01) H03K 19/003 (2006.01) H03L 1/00 (2006.01)
Patent
CA 1046143
ELECTRONIC CIRCUIT USING FIELD EFFECT TRANSISTOR WITH COMPENSATION MEANS Abstract of the Disclosure A compensation circuit for electronic circuits such as pulse generator circuits which are suitable for MOSICs includes a resistor of high resistance and parallel-connected MOSFETs of the enhancement type and depletion type, respectively. The drain electrodes of the MOSFETs are connected to a power supply through the resistor, and are also connected to the gate electrode of load MOSFET of the depletion type which constitutes a load for a MOSFET of the enhancement type. To the gate of the former enhancement type MOSFET, a controlled bias voltage is applied from the connec- tion point of MOSFETs connected in series between the power supply and ground. By employing the compensation circuit in pulse generator circuits, the instability of the oscilla- ting periods due to changes in the ambient temperature and changes in the supply voltage is compensated. Also, the differences of oscillating periods are decreased among MOSICs.
238966
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