Electronic component and method of making same

Details Electronic component and method of making same Electronic component and method of making same

H - Electricity

01

L

H01L 29/06 (2006.01) H01L 21/335 (2006.01) H01L 29/772 (2006.01)

Patent

CA 2044557

18160 ABSTRACT OF THE DISCLOSURE A permeable base transistor or an electronic component layer having a permeable base transistor is formed by providing a stack on a semiconductive substrate of insulating, conductive and insulating layers one on another and then structuring that stack to form a grating between the bars of which semiconductive material is deposited by selective epitaxial growth techniques preferably with alternating doping. With this construction, because of the presence of the insulating layers above and below the conductive gate fingers, the space charge zones are reduced in volume to reduce the capacitance of the permeable base transistor and permit higher transit frequencies.

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