Electronic grade aluminum nitride materials

Details Electronic grade aluminum nitride materials Electronic grade aluminum nitride materials

H - Electricity

01

L

117/81, 148/2.4

H01L 21/205 (2006.01) C09K 11/64 (2006.01) C30B 25/02 (2006.01) C30B 25/22 (2006.01) H01L 21/20 (2006.01) H01L 21/86 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1122859

Abstract Electronic grade aluminum nitride semiconductor material may be uniformly nucleated and epitaxially formed on an aluminum substrate by reacting aluminum oxide or aluminum nitride with nitrogen in the presence of carbon.

324077

Affiliated with

Also associated with

Rating

Electronic grade aluminum nitride materials does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electronic grade aluminum nitride materials, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electronic grade aluminum nitride materials will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-985408