G - Physics – 03 – G
Patent
G - Physics
03
G
96/151
G03G 5/08 (2006.01) G03G 5/082 (2006.01) G03G 5/14 (2006.01) G03G 5/147 (2006.01)
Patent
CA 1152802
- 1 - Abstract: An electrophotographic member has at least a supporting and a photoconductor layer formed mainly of amorphous silicon and is characterized in that the amor- phous silicon contains at least 50 atomic-% of silicon and at least 1 atomic-% of hydrogen as an average within the layer, and that a part which is at least 10 nm thick from a surface or/an interface of the photoconductor layer towards the interior of the photoconductor layer has a hydrogen content in a range of at least 1 atomic-% to at most 40 atomic-% and an optical forbidden band gap in a range of at least 1.3 eV to at most 2.5 eV. The amorphous silicon also has the property that the intensity of at least one of peaks having centers at wave numbers of approximately 2,200 cm-1, approximately 1,140 cm-1, approximately 1,040 cm-1, approximately 650 cm-1, approximately 860 cm-1 and approximately 800 cm-1 in an infrared absorption spectrum attributed to a bond between silicon and oxygen does not exceed 20% of that of a higher one of peaks having centers at wave numbers of approximately 2,000 cm-1 and approximately 2,100 cm-1 attributed to a bond between silicon and hydrogen. By this means the dark decay characteristics are improved and a satisfactory surface potential can be secured. In addition, the characteristics are very stable versus time.
382318
Horigome Shinkichi
Imamura Yoshinori
Ishioka Sachio
Maruyama Eiichi
Matsubara Hirokazu
Hitachi Ltd.
Kirby Eades Gale Baker
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