G - Physics – 03 – G
Patent
G - Physics
03
G
96/151
G03G 5/08 (2006.01) G03F 7/20 (2006.01) G03G 5/082 (2006.01)
Patent
CA 1152801
- 1 - Abstract: Disclosed is an electrophotographic member having an amorphous-silicon photoconductive layer containing hydrogen, wherein the distance between a portion of the layer in which light illuminating the layer is absorbed therein until its intensity has decreased to 1% of that at incidence, and the interface of the layer opposite to the light incidence surface thereof is at most 5 µm, whereby the residual potential of the photoconductive layer can be reduced. That part of the photoconductive layer which constitutes the electrophotographic member and which is at least 10 nm thick inwardly of the layer from the surface thereof to store charges is made of amorphous silicon that has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 1010.OMEGA..cm. Further, within the photoconductive layer, there is a region of amorphous silicon whose optical forbidden band gap is smaller than that of the surface part disposed at a thickness of at least 10 nm. By forming the region of narrower optical forbidden band gap within the photoconductive layer in this manner, the sensitivity of the layer to light of longer wavelengths can be enhanced.
376252
Horigome Shinkichi
Imamura Yoshinori
Ishioka Sachio
Maruyama Eiichi
Matsubara Hirokazu
Hitachi Ltd.
Kirby Eades Gale Baker
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